Submitted papers must be effectively formatted and use good English. Authors may well use MDPI's English editing assistance before publication or during creator revisions. Our General aim is to combine the low RDS(on) made available from silicon carbide MOSFETs with an gate push mode in which the device operates in https://www.facebook.com/permalink.php?story_fbid=pfbid0AVomy9GZvUJFhEnHxVyyTzHHfusJQLCZMDhL6WfPUJqJnxnSccWx35qNv3NgQLujl&id=61562415773754&__cft__[0]=AZVrlrX3CNfA_n8_QiUyvhFLijM_gRkthsfsdpH5DvIPRRajupdB1hN_H7cITuwn3FkY_bwnLV9bB2E2jYH7lqtnk7t3AY-6ew-u0Ggu9ZO0sdEPLwH2J_8LEoqZsIld7Zs63NnRG57FMYGECVlUrOwuDmOpPMyV8QO_0bJfnmMwH-uDc7BG62HGhemAoKHx8aBbzS92eyhrLGCc4Kuk2zgE&__tn__=%2CO%2CP-R